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The effect of thallium distribution on luminescence of CsI:Tl

机译:铊分布对CSI发光的影响:TL

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Luminescence spectra and decays of CsI-Tl evaporated thin layers of "pillar-like" structure with different distributions of activator were studied under UV-VUV and X-ray excitation. The influence of thallium distribution on luminescence is discussed in comparison with CsI-Tl single crystal. Luminescence excitation spectra in the VUV region from 4 to 40 eV of thin layers demonstrated a transfer process very similar to those observed in single crystal. The possibility of using the synchrotron radiation micrometer size X-ray beam for microluminescence study of CsI-Tl thin layers was tested in MICRPROBE station of DCI storage ring of LURE.
机译:在UV-VUV和X射线激发下,研究了用不同激活剂分布的“柱状”结构的CSI-T1蒸发薄层的发光光谱和衰减。与CSI-TL单晶相比,讨论了铊分布对发光的影响。 VUV区域中的发光激发光谱从4到40薄层的薄层演示了与单晶中观察到的转移过程非常相似。在DCI储存环的Microbrobe站测试了使用Syschrotron辐射微米尺寸X射线梁的Microprobe Stick薄层的微升X射线束。

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