Physical-chemical research of conductive materials structure on the basis of indium oxide obtained by sol-gel method

摘要

It is known, that the indium oxide alloyed by tin is a semiconductor of n-type with high for oxide materials conductivity, depending on conditions of obtaining and kind of a material (monocrystals, ceramics, thin films) varies within from 10{sup}(-4) up to 5·10{sup}4 siemens/ m.