It is known that indium oxide alloyed by tin is a semiconductor of n-type with high conductivity, depending on preparation conditions and kind of a material (monocrystals, ceramics, thin films) varies within from 10/sup -4/ up to 5*10/sup 4/ S/m. One of perspective ways of obtaining a current-conducting material on the basis of alloyed indium oxide is the sol-gel method based on a joint deposition of hydroxides of metals with the following crystallization of oxides at heat treatment. In this paper, the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and muriatic solutions and also for comparison melts of salt nitrates by an alkaline reactant (NH/sub 4/OH) are considered.
展开▼
机译：已知与锡合金化的氧化铟是具有高导电性的n型半导体，取决于制备条件和材料（单晶，陶瓷，薄膜）的种类，其变化范围为10 / sup -4 /至5 * 10 / sup 4 / S / m。一种基于合金化的氧化铟获得导电材料的透视方法之一是基于凝胶结合法的溶胶-凝胶法，该方法是在热处理过程中金属氢氧化物的联合沉积以及随后氧化物的结晶。本文研究了铟锡氧化物和硝酸溶液中共沉淀的铟和锡的氢氧化物热处理过程中铟锡氧化物体系中相形成和自由电子（Ne）浓度变化的结果，还用于比较硝酸盐熔体的硝酸盐熔体。考虑碱性反应物（NH / sub 4 / OH）。
展开▼
