The Effect of Zn/Sn Ratio on the Electrical Performance of Amorphous ZrZnSnO (ZZTO) Thin Film Transistors by RF Sputtering

摘要

Amorphous zirconium-zinc-tin-oxide (a-ZZTO) thin films and thin film transistors (TFTs) are investigated. The transmittance of the a-ZZTO is over 80% in the visible light wavelength region. The band gap, extracted from Tauc plot, is around 3.8 eV. The as-fabricated Zr_(0.03)Zn_(0.32)Sn_(0.65)O TFT exhibits a threshold voltage of 2.8 V, field-effect mobility of 10.25 cm~2/V-s, a sub-threshold swing of 800 mV/dec and an on/off ratio of 10~5. As the Zn/Sn ratio increases, the threshold voltage increases and the field-effect mobility decreases.