We demonstrate here a sol-gel derived zinc oxide (ZnO) thin film transistor with a multi-channel architecture. As indicated in the experiment results, the number of film coating time and annealing temperature has greatly effects on film properties. The device with multi-channel architecture shows better performance than that without multi-channel one. The multi-channeled ZnO TFT shows high on-off ratio 8.5 × 10~6 and high carrier mobility 77.61 cm~2/V.s. The good device performance may attribute to the use of multichannel, the multiple coatings of ZnO, suitable annealing temperature, and adequate oxide gate.
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