Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100°C

摘要

Nanocrystalline Silicon (nc-Si) films were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 °C) for use as an active layer in bottom-gate thin-film transistors (TFTs). Hydrogen dilution technique was attempted to increase the crystalline volume fraction (X_c). The hydrogen dilution ratio, R_H=[H_2]/[SiH_4], was varied from 2 to 74. X_c of the nc-Si films was estimated by Raman spectrum. The incubation-layer thickness was estimated by transmission electron spectroscopy (TEM). Incubation layer was limited up to 5.26 nm and crystallinity was 71 %.