A low temperature CMOS process has been demonstrated on Corning? monocrystalline thin-film silicon on glass (SiOG) substrates (1), where the substrate offers the capability to realize improved electronic performance for display driver circuits. The process technology has been designed to minimize the number of mask layers and processing steps in order to reduce cost and increase display panel yield. An NMOSFET is built in a thin-film p-type substrate and operates as a conventional inversion channel device with ?+ source and drain regions. The PMOSFET is created in the samep-type thin-film substrate with/H- source and drain regions. The flatband voltage can be adjusted to equal the negative magnitude of the NMOS threshold voltage producing a fully depleted thin-film channel in the PMOSFET with zero gate voltage. PMOSFET channel conduction results by operating the device in accumulation, providing complementary MOS structures in a single Fermi-level process technology.
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