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Improved Phase Data Acquisition for Thermal Emissions Analysis of 2.5D IC

机译:改进了2.5D IC热排放分析的相位数据采集

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Lock-in thermography (LIT) phase data is used to generate phase shift versus applied lock-in frequency plots to estimate defect depth in semiconductor packages. Typically, samples need to be tested for an extended time to ensure data consistency. Furthermore, determining the specific point on the thermal emission site to collect data from can be challenging, especially if it is large and dispersive. This paper describes how the use of new computational algorithms along with streamlined and automated workflows, such as self-adjusting thermal emission site positioning and phase measurement auto-stop, can result in improvements to data repeatability and accuracy as well as faster time to results. The new software is applied to generate the empirical phase shift versus applied lock-in frequency plot using 2.5D IC devices with known defect location. Subsequently, experimental phase shift data from reject 2.5D IC devices with unknown defect locations are obtained and compared against the empirical phase shift plot. The defect Z-depth of these devices are determined by comparing where the experimental phase shift data points lies with respect to empirical phase shift plot and validated with physical failure analysis (PFA).
机译:锁定热成像(LIT)相位数据用于生成相移与应用锁定频率图以估计半导体封装中的缺陷深度。通常,需要在很长时间测试样本以确保数据一致性。此外,确定热发射站点上的特定点以收集来自可能具有挑战性的数据,特别是如果它是大而分散的。本文介绍了如何使用新的计算算法以及简化和自动化工作流程,例如自调节热发射站点定位和相位测量自动停止,这可能导致数据重复性和准确性以及更快的结果。使用具有已知缺陷位置的2.5D IC器件,应用新软件与应用锁定频率绘制的经验相移相比。随后,获得来自拒绝2.5D IC器件的实验相移数据,并与经验相移地图进行比较。通过比较实验相移数据点相对于经验相移曲线并用物理失败分析(PFA)验证来确定这些装置的缺陷Z深度。

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