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Studies of Galvanic Corrosion (Al-Ti Cell) on Microchip Al ondpads and Elimination Solutions

机译:微芯片Al ondPads和消除解决方案的电晶腐蚀(Al-Ti Cell)的研究

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Galvanic corrosion (two metal corrosion) on microchip Al bondpads may result in discolored or non-stick bondpad problem. In this paper, a galvanic corrosion case at bondpad edge will be presented. Besides galvanic corrosion (Al-Cu cell), a concept of galvanic corrosion (Al-Ti cell) is proposed, which is used to explain galvanic corrosion at bondpad edge with layers of TiN/Ti/Al matellization structure. A theoretical model of galvanic corrosion (Al-Ti cell) is proposed to explain chemically & physically failure mechanism of galvanic corrosion at bondpad edge. According to the theoretical model proposed in this paper, galvanic corrosion on microchip Al bondpads could be identified into two corrosion models: galvanic corrosion (Al-Cu cell) occurred mostly at the bondpad center and galvanic corrosion (Al-Ti cell) occurred specially at bondpad edge with TiN/Ti/Al matellization structure. In this paper, a theoretical model of galvanic corrosion (Ai-Ti cell) will be detail discussed so as to fully understand failure mechanism of galvanic corrosion the bondpad edge. Moreover possible solutions to eliminate galvanic corrosion (Al-Ti cell) are also discussed.
机译:Microchip Al BondPads上的电流腐蚀(两个金属腐蚀)可能导致变色或非粘性债券问题。本文将提出邦德边缘处的电流腐蚀壳体。除了电流腐蚀(Al-Cu细胞)外,提出了一种电流腐蚀(Al-Ti细胞)的概念,用于解释粘结板边缘的电抗腐蚀,具有锡/ Ti / Al恒定结构层。提出了一种基润腐蚀(Al-Ti细胞)的理论模型,解释了邦德边缘电流腐蚀的化学和物理故障机理。根据本文提出的理论模型,可以将微芯片Al BodPAD上的电抗腐蚀鉴定为两种腐蚀模型:主要发生在粘合剂中心和电铝腐蚀(Al-Ti Cell)的电流腐蚀(Al-Cu细胞)特别发生邦德边缘与锡/钛/铝型结构结构。本文将详细讨论了电流腐蚀(AI-Ti Cell)的理论模型,以完全了解电流腐蚀的失效机制BondPad边缘。此外,还讨论了消除电抗腐蚀(Al-Ti细胞)的可能解决方案。

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