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VSPA/sup TM/: a new family of low cost three dimensional semiconductor packages for single and multiple chip modules

机译:VSPA / SUP TM /:单个和多芯片模块的新系列低成本三维半导体套装

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A new family of semiconductor packages, referred to as VSPA/sup TM/, is described which combines unique 3D design features and materials technology selection to produce superior electrical, thermal and mechanical performance for both single and multiple chip modules. These packages are readily scalable to accommodate a wide variety of footprint, shape, I/O (up to 1000) and bandwidth requirements at very low cost ($0.01). The unique design and fabrication method eliminates the die leadframe, allowing a smaller footprint, relaxed lead pitch, and robust leads with improved coplanarity. The I/O pins are a constant regardless of the package frame size, which provides a low inductance path from die to PCB. The peripheral lead structure allows for visual inspection and ease of rework. The die attaches in a flip chip manner to a metallic plate, an integral part of the package, providing a direct thermal path to ambient or cooling devices. The 3D stacking of the leads results in significant size reduction, low inductance paths, with the pin design providing reduced package parasitics and allowing resonance free operation up to 3.5 GHz. Techniques for 3D chip stacking are described as well as environmental test results, standard activity, and novel heatsink designs. A liquid crystal polymer frame provides excellent stability with a 335/spl deg/C melt point, and allows for tolerances of less than 1 mil to be held for pin alignment and coplanarity in high volume manufacturing environments.
机译:描述了一个新的半导体套装,称为VSPA / SUP TM /,它结合了独特的3D设计特征和材料技术选择,为单个和多芯片模块产生卓越的电气,热和机械性能。这些包装易于缩放,以满足各种占地面积,形状,I / O(最多1000)和带宽要求,成本非常低(0.01美元)。独特的设计和制造方法消除了模具引线框架,允许具有改善的共面的占地面积较小,宽松的铅间距和强大的引线。无论包框架尺寸如何,I / O引脚都是恒定的,这提供了从DIE到PCB的低电感路径。周边铅结构允许目视检查和易于返工。模具以倒装芯片方式连接到金属板,包装的整体部分,提供与环境或冷却装置的直接热路径。引线的3D堆叠导致显着的尺寸减小,低电感路径,引脚设计提供减少的封装寄生,并允许自由操作高达3.5 GHz。描述了3D芯片堆叠的技术以及环境测试结果,标准活动和新型散热器设计。液晶聚合物框架具有优异的稳定性,具有335 / SPL DEG / C熔体点,并且允许在大容量制造环境中保持销钉和共面的销钉和共面积小于1密耳的公差。

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