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A NEW IC WAFERS WASHING METHOD: QC(QUICK CHANGE) WASHING

机译:一种新的IC晶片洗涤方法:QC(快速变化)洗涤

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A new IC wafer washing has been developed. It is called as QC (Quick Change) washing which is possible to save DI water consumption by using the QC rinse bath. The concentration of the chemicals remaining on the wafer in a rinse process is depends on the concentration of the residual chemicals in the solution of the rinse bath. In QC washing, the concentration of the residual chemicals in the solution of the rinse bath is quickly diluted by using the QC rinse bath which is possible to change quickly the solution in the rinse bath to the supplied DI water. In this paper, the principle of the QC rinse bath, the experimental results for the change rate in QC rinse bath and OF (over flow) rinse bath obtained by a color water method and an application to new IC wafer washing system have been reported.
机译:开发了一种新的IC晶片洗涤。它被称为QC(快速变化)洗涤,这是通过使用QC漂洗浴节省DI耗水量的洗涤。在漂洗过程中留在晶片上的化学物质的浓度取决于漂洗浴溶液中残留化学品的浓度。在QC洗涤中,通过使用QC漂洗浴将漂洗浴溶液中的残留化学物质的浓度快速稀释,这可以通过迅速将漂洗浴中的溶液迅速变化到供应的DI水中。本文据报道,QC漂洗浴的原理,QC漂洗浴中的变化率的实验结果和通过彩色水法获得的漂洗浴和新的IC晶片洗涤系统的漂洗浴。

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