Investigation of InGaAs p-i-n photodiode for optical-microwave mixing process

摘要

An InGaAs p-i-n photodiode, operating at 1.3 /spl mu/m has been fabricated and used in an optical-microwave mixer configuration. The DC characteristics, diode capacitance for various incident optical power as well as frequency dependence of responsivity and reflection coefficient up to 3 GHz were investigated. Bias and local oscillator power level dependence of optical-microwave mixing process is reported and discussed.