The microscopic Monte Carlo technique of the millimetre-wave unipolar devices simulation

摘要

A new efficient method of the electron's wave vector calculation after its ionised impurity scattering is discussed in this paper. The accent has been put on the fact that the electron scattering on ionised impurities plays an important role in hot carrier diffusion noise of the millimetre-wave devices based on the highly doped gallium arsenide. The characteristics of the GaAs millimetre-wave FETs with a quarter-micrometer gate were analysed.