Evaluation of hydrogen sensitivity and measuring range of integrated MISFET sensors by means of testing the electrical characteristics o sensing elements

摘要

Integrated hydrogen sensors based on Pd-Ta{sub}2O{sub}5-SiO{sub}2-Si structure and consisting of MISFET, thermodiode, heater and test elements have been developed and investigated. There has been found the relationships between the electricalcharacteristics such as the threshold voltage, transconductance etc. of hydrogen sensitive MISFET and the measuring characteristics of integrated sensor based on this MISFET. This allows to except the hydrogen testing stages from the finish testingprocesses and to use only conventional IC' electrical tests.