Energy balance simulation of submicrometer Si n-MOSFETs

摘要

This work discusses the results of simulations of submicrometer MOSFETs. It is shown that the energy balance model can be effectively used to reproduce experimental results, in contrast to the drift-diffusion model that substantially underestimates the drain current and transconductance of submicrometer FETs. It is known that velocity overshoot can be successfully predicted also by Monte-Carlo simulations. However, the energy balance model is much less time-consuming.