FUTURE SILICON SUBSTRATE FOR OPTO-ELECTRONIC COUPLED INTEGRATED CIRCUIT DEVICES

摘要

We propose a future silicon substrate for opto-electronic coupled integrated circuit devices in this article. The objective optical wavelength is short as around 300～400nm. The laser diodes around this wavelength are much required for future optical systems in our life. One of the most promising materials are GaN and its mixed alloys. The epitaxial growth of GaN on Si was carried out by using boron monophosphide (BP) as a buffer layer. First, the growth of BP on Si substrates has been carried out. We have successfully grown BP epitaxial layer on (100)Si substrates with l0Xl0mm~2 area. The GaN layer grown on BP/Si at around 800°C has been mainly cubic type. The growth of BP on Si and GaN on BP/Si will be discussed.