SCIENCE AND MODELING OF IMPURITY GETTERING IN SILICON

摘要

For IC applications, intrinsic gettering using oxide precipitates in CZ Si has been extensively investigated, with the main emphasis on the creation of the gettering sites. While this subject is discussed, in the present review we emphasize recent advances in the understanding of a variety of processes and mechanisms of gettering yield-detracting metallic impurities from the device active regions to the created gettering regions. Directions of ULSI and SOI gettering needs are mentioned.