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Suppression of magnetization ringing in submicron Pac-man shaped Ni{sub}80Fe{sub}20 thin film elements

机译:抑制亚微米PAC-MAN形Ni {Sub} 80Fe {Sub} 20薄膜元件

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Magnetization dynamics of submicron elongated Pac-man (EPM) shaped Ni{sub}80Fe{sub}20 thin film elements were studied using micromagnetic simulation. In-plane magnetic field of 390 Oe was applied on the EPM element at a 45° angle from the long axis. Pulse duration was varied to reduce magnetization ringing. From information on the contributions of the shape anisotropy, applied field, and demagnetization energy in the magnetization reversal including magnetization ringing, it was found that pulse adjustment controls the magnetization process of the EPM element and the switching pulse duration is an important parameter to design magnetic random access memory (MRAM) device.
机译:使用微磁性仿真研究了亚微米伸长PAC-MAN(EPM)形状的Ni {Sub} 20Fe {Sub} 20Fe {Sub} 20薄膜元件。从长轴以45°角在EPM元件上施加390 OE的面内磁场。脉冲持续时间变化以减少磁化振铃。从关于形状各向异性的贡献的信息,施加的场和去磁化能量在包括磁化振动的磁化反转中,发现脉冲调整控制EPM元件的磁化过程,开关脉冲持续时间是设计磁的重要参数随机存取存储器(MRAM)设备。

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