Oxone sensin properties of In_2O_3-based metal oxide semiconductor thick films

机译：基于_2O_3的金属氧化物半导体厚膜的氧源敏素性能

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Ozone sensing propoerties of In_2O_3-based metal oxide semiconductor thick films have been investigated.The In_2O_3 sensing layer is quite sensitive to ozone,but the saturated stable ensitivity cannot be obtained at the ozone expossure of 100 ppb for 5 min.The additon of Fe_2O_3(3wt.

机译：研究了In_2O_3的金属氧化物半导体厚膜的臭氧感应探针。In_2O_3感测层对臭氧非常敏感，但在100ppb的臭氧曝光中不能获得饱和稳定的无限度5分钟。Fe_2O_3的添加剂（ 3wt。

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《International meeting on chemical sensors》|1998年||共3页
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S.R.Kim; H.K.Hong; C.H.Kwon; D.H.Yun; K.Lee;
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Oxone sensin properties of In_2O_3-based metal oxide semiconductor thick films

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