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Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe_3O_4 films

机译:使用红外线磁阻效果将(100)和(111)定向Fe_3O_4薄膜的磁阻进行比较

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摘要

The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe_3O_4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film
机译:红外磁效果(MRE)用于将在MgO上生长的Fe_3O_4的外延薄膜中的磁阻(MR)与(100)和(111)晶体取向进行比较。在(111)膜中检测的较小的MRE显示与较小的电测量MR,其行为与(111)薄膜中的脱磷酶边界的较低密度一致

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