Silicon-germanium-boron amorphous alloy on p-type Si as infrared Schottky detector

摘要

In this work, Schottky barriers obtained from the SiGeB alloy on p-Si are demonstrated and proposed as photoemissive infrared photodetectors. The SiGeB alloy is obtained by PECVD at 300/spl deg/C, the source gases used were SiH/sub 4/, GeF/sub 4/ and B/sub 2/H/sub 6/. The resulting barrier height when deposited onto p-Si is determined from I-V measurements and ranges from 0.7 to 0.38 eV. The main parameter in the barrier height control is the deposition pressure.