The oxidation of copper-indium diselenide surfaces

摘要

The mechanisms, chemistry, structure and interface properties of native and grown oxides on CuInSe/sub 2/ are presented. During thermal oxidation of this ternary semiconductor, the composition and the electrical properties are controlled, primarily by the temperature and duration of oxidation treatment. The oxygen reacts principally with In, leaving the Cu and Se to readjust at the interface to form a Cu/sub x/Se transition layer. The thermal oxide consists of an In/sub 2/O/sub 3/ matrix and having either inclusion of Cu or SeO/sub 2/ particles, depending on the precise formation conditions. The Cu/sub x/Se transition layer eventually acts as a barrier that prevents further oxidation of the underlying CuInSe/sub 2/.