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EFFECT OF IRRADIATION ON THERMAL EXPANSION OF SiC_f/SiC COMPOSITES

机译:辐照对SiC_F / SIC复合材料热膨胀的影响

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Silicon carbide (SiC) has long been considered an attractive material for use in a fusion reactor environment because of its excellent high temperature strength and thermal conductivity, dimensional stability during irradiation, and low neutron activation. However, monolithic SiC is not a suitable choice for structural applications due to its brittle nature. In contrast, SiC-fiber-reinforced/SiC-matrix (SiC_f/SiC) composites have recently been shown to exhibit non-catastrophic failure modes analogous to the plastic deformation exhibited by traditional metallic materials [1]. As a result, SiC_f/SiC composites are under consideration as candidate structural materials in several fusion reactor concepts. However, several issues must be addressed before their inclusion in detailed designs: optimization of constituent materials, refinement of fabrication and processing methods, and characterization of the effect of irradiation on material properties. The present study seeks to quantify the effect of irradiation on the linear thermal expansion of several SiC_f/SiC composites fabricated using different constituent materials and processing routes. Six different SiC,/SiC composites were characterized by measuring their thermal expansion in the unirradiated and irradiated conditions over the temperature range 300 to 1000 deg C. The irradiation was conducted in the Experimental Breeder Reactor II (EBR-II), in an inert gas atmosphere, at a nominal temperature of 1000 deg C, to doses of either 33 or 43 dpa-SiC.
机译:由于其优异的高温强度和导热性,辐照期间,碳化硅(SiC)长期以来一直被认为是用于融合反应器环境的有吸引力的材料,以及在照射期间的导热性,尺寸稳定性,以及低中子激活。然而,由于其脆性性,单片SiC不是结构应用的合适选择。相反,最近已经显示出SiC-纤维增强/ SiC - 基质(SiC_F / SiC)复合材料表现出类似于传统金属材料表现出的塑性变形的非灾难性故障模式[1]。结果,在几种融合反应堆概念中,正在考虑SIC_F / SIC复合材料作为候选结构材料。然而,必须在包含详细设计之前解决的几个问题:优化组成材料,制造和加工方法的细化,以及辐射对材料性质的效果的表征。本研究旨在量化照射对使用不同组成材料制造的几种SiC_F / SIC复合材料的线性热膨胀的影响和加工途径。通过在300至1000℃的温度范围内测量其在未照射和照射条件下的热膨胀,在300至1000℃下测量六种不同的SiC复合材料。在惰性气体中,在实验育种反应器II(EBR-II)中进行辐射气氛,在1000℃的标称温度下,为33或43dPa-SiC的剂量。

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