The peculiarities of Hanle effect (I.e., the depolarization of edge photoluminescence in a transverse magnetic field) in semiconductors, brought about by spin-dependent recombination of free electrons with deep paramagnetic centers, have been investigated in GaAs0.979N0.021 alloy at room temperature. The measured Hanle curve consists of narrow and wide parts with the widths at the half-height being ～100 and ～ 120000 G. The difference between the widths by three orders of magnitude results from strongly differing spin lifetimes of bound and free electrons, T_(sc) and T_s. Using g-factor values +2 and +1 for bound and free electrons, respectively, we have found that T_(sc)≈ 700 ps and T_s ≈ 2 ps. Thus obtained values of T_(sc) and T_s allow us to describe theoretically the experimental Hanle curve as well as its dependence on the pump intensity.
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