Method for suppressing non-radiative recombination in doped materials with deep centers.

摘要

Method for suppressing the non-radiative recombination in materials doped with deep levels.; Procedure for obtaining semiconductor materials with levels located near the center of the bandgap (deep levels) that do not undergo non-radiative recombination multiple phonon emission (MPE) associated to these levels. It is to increase the doping of the semiconductor with those impurities which produce deep levels up to the point that causes a Mott transition between wave functions of electrons trapped in the centers, so that they are distributed throughout all the semiconductor. When this occurs, local variations in electrical charge density and with them the MPE disappear. From the resulting materials (semiconductors with three separate energy bands (1), (2) and (3)) can be manufactured optoelectronic devices (solar cells, photodetectors, lasers, etc) capable of efficiently use (and if the if required, simultaneous) radiative electronic transitions in unconventional energy ranges.