Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTe

摘要

The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in Zn_xCd_(1-x)Te (0≤x≤1), Zn_xHg_(1-x)Se (0.02 ≤x≤1) and Zn_xHg_(1-x)Te (x=0.15) are considered. The temperature dependences of the charge carrier mobility in temperature range 4.2-360 K are calculated.