QUANTUM WELL WIDTH AS AN UNCERTAINTY SOURCE IN ELECTRONIC TRANSITIONS: A SIMULATED APPROACH

摘要

Semiconductor heterostructures of nanometric dimensions represent a challenge in Metrology, requiring innovations and new developments. A single quantum well is the simplest structure of this nature, the basis for many optoelectronic devices, like lasers. In this work it is calculated the eigenstates of electrons, light holes and heavy holes of quantum wells of GaAs into Al_(0.2)Ga_(0.8)As. It was varied the width of these wells by typical monolayer values, and evaluated implications in the electronic transitions from valence band to conduction band. Results demonstrated that uncertainties as less as 0.35 nm in the quantum well width cause optical transitions up to 13meV.