Ultra-low energy ion implantation technology using decaborane (B_(10)H_(14)

摘要

We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B_(10)H_(14)) molecule. Since B_(10)H_(14) consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we show an ultra-shallow 500 eV boron profile, which do not show transient diffusion after rapid thermal annealing.