Thin oxide characterization is becoming more involved due to the secondary effects like oxide leakage and narrow active regions in small-geometry devices. In-line monitoring techniques should also be sensitive to gate oxide degradation with the subsequent steps of an advanced CMOS multilevel metal process. In this work, we use transient current measurements (I/sub G/-V/sub G/) to investigate process-induced defects in MOS capacitors with thin oxides. We demonstrate high sensitivity and simplicity of the measurement, as well as a novel approach to data analysis. In the literature, transient currents such as stress-induced leakage SILC and displacement current, have been attributed to oxide defects: either in the oxide volume (slow trapping), or near the interface (fast trapping). No correlation between these currents has been reported so far. Using specially designed structures, we observed for the first time that fast or slow trapping may occur either in common or exclusively, and that depending on the V/sub G/ range, either the SILC or the displacement component would dominate. Mechanisms are discussed.
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机译:由于氧化物泄漏和小几何装置中的窄有源区,薄氧化物表征变得越来越多。在线监测技术也应该对栅极氧化物降解敏感,随后的CMOS多级金属工艺的后续步骤。在这项工作中,我们使用瞬态电流测量(I / SUB G / SUB G /)来研究具有薄氧化物的MOS电容器中的过程诱导的缺陷。我们展示了测量的高灵敏度和简单性,以及一种新的数据分析方法。在文献中,诸如应力引起的泄漏硅胶和位移电流的瞬态电流归因于氧化物缺陷:在氧化物体积(缓慢捕获)或界面附近(快速捕获)。目前没有报告这些电流之间的相关性。使用专门设计的结构,我们首次观察到快速或缓慢捕获的第一次可能以共同点或排他性发生,并且根据V / SUB G /范围,SILC或位移分量将支配。讨论机制。
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