We report the design, fabrication and initial testing of the first velocity modulation transistor (VMT), a high speed device proposed by Sakaki in 1982. Our VMTs are built on a GaAs/Al/sub x/Ga/sub 1-x/As heterostructure with 70 nm separating a high mobility 2 dimensional electron gas (2DEG) and a lower mobility, doped channel grown at a slightly reduced temperature. The mobility ratio between the 2DEG and the low mobility channel was measured to be 2.5:1 at 300 K when the channels are both fully populated. Real space transfer, which is central to the operation of the VMT, has been verified in the heterostructure under DC operation using a three-gated device created for this purpose. We have fabricated a VMT structure with top and bottom gates and performed DC measurements to determine optimum operating conditions.
展开▼
机译:我们在1982年报告了第一速度调制晶体管(VMT)的设计,制造和初始测试,由Sakaki提出的高速设备。我们的VMT构建在GaAs / Al / Sub X / Ga / Sub 1-X / As上具有70nm的异质结构,分离高迁移率2尺寸电子气(2deg)和较低的迁移率,掺杂的通道在略微降低的温度下生长。当通道完全填充时,测量2DEG和低迁移率之间的迁移率为2.5:1,在300k处。对于VMT的操作是核心的实际空间传输已经在DC操作下的异质结构中使用了为此目的创建的三个门控设备来验证。我们已经制造了具有顶部和底部栅极的VMT结构,并执行了直流测量以确定最佳操作条件。
展开▼