Fabrication of YBCO submicron bridges by selective epitaxy growth on a niobium inhibitor

摘要

By using a Selective Epitaxial Growth technique (SEG) with niobium as an inhibitor, YBa_2Cu_3O_(7-#delta#) thin film bridges of widths 400 nm to 20#mu#m on MgO substrates have been fabricated. Al the bridges have a critical current density, J_c>1.0 MA/cm~2 at 77.3K. For bridges fabricated from a thinner film, the J_c values are 2-3 times higher than the value of bridges from a thicker film. Also, very high J_c (approx 6.0 MA/cm~2) was found in a 400 nm wide bridge.