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Improved 10 V josephson voltage standard arrays

机译:改进了10 V Josephson电压标准阵列

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10V Josephson voltage standard arrays are fabricated with an Nb/Al_2O_3/Nb trilayer deposited directly on the Si wafer. The edges of the base electrode are insulated by a modified anodization process. A microstrip network without dc blocks is newly designed, using a double finline taper. The width of the constant-voltage steps monotonically decreases with the microwave power for good arrays. Switching between different voltage levels from 10 V to 0 V and vice versa is possible by simply switching the dc voltage bias without rf-power adjustment.
机译:10V Josephson电压标准阵列由直接沉积在Si晶片上的Nb / Al_2O_3 / NB三层制造。基极的边缘由改进的阳极氧化过程绝缘。使用双重线线锥形,新设计了没有直流块的微带网络。恒定电压步骤的宽度单调地随着良好阵列的微波功率而减小。通过简单地切换DC电压偏压,可以在10V至0 V之间切换在10V至0 V之间的切换,反之亦然,而无需RF功率调节。

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