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Study of Ramp-Type Josephson Junctions by HREM

机译:HREM研究斜坡型约瑟夫森交界处

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Structural aspects of ramp-type Josephson junctions based on REBa_2Cu_3O_(7-δ) high-T_c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa_2Cu_(3-x)Ga_xO_(7-δ).The ramp-geometry depends on the etching conditions. High levels of Ga doping (x > 0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
机译:基于REBA_2CU_3O_(7-δ)高T_C超导体的斜坡型Josephson结的结构方面由横截面透射电子显微镜和与制造工艺或物理性质相关的结果来研究。阻挡层材料是PRBA_2CU_(3-X)GA_XO_(7-Δ)。斜坡几何形状取决于蚀刻条件。高水平的Ga掺杂(x> 0.7)影响阻挡层的微观结构,从而改变了结符性质。

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