Evaluation of a 10 kV, 400 kA Si SGTO at High dI/dt

摘要

The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 us. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA{sup}2s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.