40-Gbit/s ICs for future lightwave communications systems

摘要

This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-/spl mu/m gate InAlAs/InGaAs HEMT with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing and amplifying operation at 40 Gbit/s.