Breakdown effects on the performance and reliability of power MESFETs

机译：对电源MESFET的性能和可靠性的故障效应

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RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.

机译：RF击穿效果的特征在于波形测量并结合在大信号GaAs MESFET模型中。与基于DC击穿特性的传统模型相比，发现本模型更准确地预测晶体管的最佳偏置，匹配和驱动条件，以及其输出功率，效率，线性度和可靠性。

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《Annual Gallium Arsenide Integrated Circuit Symposium》|1996年||共4页
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Shirokov M.S.; Leoni R.E.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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2. Gate field emission induced breakdown in power SiC MESFETs [J] . Ho-Young Cha, Thomas C.I., Choi Y.C., IEEE Electron Device Letters . 2003,第9期

机译：功率SiC MESFET中栅场发射引起的击穿
3. Physical modeling of off-state breakdown in power GaAs MESFETs [J] . Kazuaki Kunihiro, Yuji Takahashi, Yasuo Ohno Solid-State Electronics . 2003,第4期

机译：功率GaAs MESFET的断态击穿的物理模型
4. Breakdown effects on the performance and reliability of power MESFETs [C] . Shirokov, M.S., Leoni, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual . 1996

机译：击穿对功率MESFET的性能和可靠性的影响
5. Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a silicon carbide power MESFET device at 2GHz. [D] . Sekar, Saalini Valli. 2008

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Breakdown effects on the performance and reliability of power MESFETs

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