Here we report on the world's first monolithically integrated HEMT-HBT MMIC receiver. The S-band receiver MMIC is the first of its kind, integrating a 2-stage HEMT LNA RF amplifier and a HEMT LO amplifier with an HBT double-balanced Gilbert cell mixer using selective MBE. The MMIC achieves greater than 18 dB conversion gain over an RF input band from 1.4-2.6 GHz, a minimum DSB noise figure of 2.3 dB and an IF3 of -0.5 dBm with no IF amplification. In addition, LO-IF and RF-IF isolations in excess of 22 dB and a 2-2 Spur suppression of 40 dBc are obtained due to the use of the double balanced HBT Gilbert cell mixer. The compact MMIC is 7.7/spl times/2.9 mm/sup 2/ and is self-biased from /spl plusmn/5 V supplies with a total dc power consumption of 735 mW. This HEMT-HBT MMIC represents the highest complexity design achieved using the HEMT-HBT selective MBE IC technology and demonstrates size and RF performance advantages over single-technology MMIC and hybrid integrated approaches.
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