Fabrication and characterization of GaInAsP/InP long wavelength quantum-wire lasers

摘要

1.55 /spl mu/m wavelength GaInAsP-InP quantum-wire lasers fabricated by two-step OMVPE growth and EBX lithography are characterized and compared with single-quantum-film lasers prepared on the same wafer. A clear anisotropic PL property as well as a blue shift energy corresponding to the wire width was confirmed. Higher differential quantum efficiency with lower threshold current operation (I/sub th/=5.5 mA, J/sub th/=34A/cm/sup 2/ at 90 K) was obtained at temperature region T170 K.