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Response of Crystal Growth Experiments to Time-Dependent Residual Accelerations

机译:晶体生长实验对时间依赖性剩余加速的响应

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Real-time Seebeck voltage variations across a Sn-Bi melt during directional so-lidification in MEPHISTO on USMP-11 show a distinct variation which can be correlated with thruster firings. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-solid interface. This allows a direct comparison of numerical simulations with the Seebeck signals obtained on USMP-1. The effects of such, accelerations on com-position for a directionally solidifying Sn-Bi alloy have been simulated numeri-cally. USMP-1 acceleration data was used to assist in our choice of accelerationmagnitude and orientation.
机译:在USMP-11上的Mephisto中的定向所以透明化期间SN-BI熔化的实时塞贝克电压变化显示出不同的变化,可以与推进器烧制相关。塞贝克电压测量与熔融固体界面处的瞬时平均熔体组合物的响应有关。这允许使用在USMP-1上获得的塞贝克信号直接比较数值模拟。这种效果在定向固化的Sn-Bi合金的COM位置上的加速度已经进行了模拟了数字。 USMP-1加速数据用于帮助我们选择的加速度和方向。

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