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Effects of various carboxylic acids on properties of chemical-bath-deposited In(S,O,OH) films as buffer layers for Cu(In,Ga)Se2 solar cells

机译:各种羧酸对Cu(IN,GA)SE2太阳能电池(IN,GA)SE2太阳能电池(IN)SE2太阳能电池的缓冲层(S,O,OH)膜中的化学浴沉积性能的影响

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The surface morphologies,compositions,crystal structures,and optical properties of In(S,O,OH) films deposited with the carboxylic acids such as acetic acid,citric acid,formic acid,or succinic acid on the soda-lime glass substrates by the chemical bath deposition (CBD) process were investigated.The conformal coverage of In(S,O,OH) films on the glass substrates was achieved by optimizing the pH values in the bath solution.The hexagonal and cubic crystal structure coexisted in the In(S,O,OH) films.Except the succinic acid,the wider bandgap energies of In(S,O,OH) films deposited with the various carboxylic acids than that of CdS films were achieved.
机译:用羧酸,柠檬酸,甲酸,碳酸,甲酸,甲状腺玻璃基板上沉积羧酸(S,O,OH)薄膜的表面形态,组合物,晶体结构和光学性质研究了化学浴沉积(CBD)工艺。通过优化浴液中的pH值来实现玻璃基板上的(S,O,OH)膜的共形覆盖。六边形和立方晶体结构共存( S,O,OH)薄膜。施加琥珀酸,达到沉积在各种羧酸的薄膜中的更宽的带隙能量比CDS膜的薄膜。

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