The realization problem of low-cost, reliable and long-lived field emitter arrays (FEAs) is a most complicated one in the development of the element base for vacuum microelectronics. Technological processes for the fabrication of the FPE matrix FEAs use an electrodeless gas microwave (MW) discharge with electron-cyclotron resonance (ECR). The sets where a highly ionized (5-7%) plasma of ECR MW gas discharge, employed as suitable both for low-energy (20-50 eV) cleaning and precision dry etching with controlled selectivity and anisotropy and low-temperature deposition of high-quality defect-free thin dielectric, semiconducting and conducting films from various materials with specified electrophysical properties. At present, certain progress has been achieved toward the development of small-aperture ECR sources of MW plasma for a processed wafer area of 5 to 10 cm/sup 2/. However, the generation of large MW plasma volumes and large diameter (300-500 cm/sup 2/ and more) ion beams with high current density and processing uniformity which are necessary to fabricate high-dimension flat screens, is still an urgent problem.
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