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Analysis of the effect of mechanical strength of the resist film on pattern collapse behavior using atomic force microscope

机译:用原子力显微镜分析抗蚀剂膜机械强度对图案塌陷行为的影响

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Recently, pattern collapse is becoming one of the critical issues in semiconductor manufacturing and many works have been done to solve this issue1) 2). Since pattern collapse occurs when outer force onto the resist pattern such as surface tension, impact of rinse solution, etc. surpasses the resistance of the resist pattern such as mechanical strength, adhesion force between resist and substrate, it is considered effective for improvement of pattern collapse to control resist film properties by track process, i.e., optimization of the mechanical properties of the resist film and enhancement of the adhesion force between resist and substrate3) -5). In this study, we focused on the mechanical strength of the resist film and examined how post applied bake (PAB) condition affects the pattern collapse behavior. From ellipsometry measurement, it was found that increasing PAB time and temperature resulted in thickness reduction and refractive index increase, which suggested that the density of the resist film became high. Then we analyzed the mechanical strength of the resist film with the tip indentation method using atomic force microscope. It was found that the hardness of the resist film was affected by PAB conditions and regardless of PAB condition, hardened layer existed beneath the film surface. Finally, we carried out the measurements of loads to collapse 180nm resist dot patterns using the direct peeling with atomic force microscope tip (DPAT) method. Loads ranged from 600 to 2000nN overall and essentially increased as seen for indentation measurements when PAB temperature or time was increased, except some critical conditions. Through these evaluations using AFM, we succeeded in quantitatively evaluate the mechanical properties of the resist films processed with various PAB conditions. It was found that PAB condition obviously impacts on the hardness of the resist film and it is closely related to pattern collapse load.
机译:最近,模式崩溃正成为半导体制造中的关键问题之一,并且已经完成了许多作品来解决这个问题1)2)。由于当外力在诸如表面张力诸如表面张力的抗蚀剂图案的外力时发生模式塌陷,因此抗蚀剂图案的电阻诸如机械强度,抗蚀剂和基板之间的粘附力的电阻,因此被认为是有效的改进模式通过轨道工艺塌陷来控制抗蚀剂膜特性,即优化抗蚀剂膜的机械性能和抗蚀剂和基板3)-5之间的粘合力的增强)。在这项研究中,我们专注于抗蚀剂膜的机械强度,并检查后施加的烘烤(PAB)条件如何影响模式塌陷行为。从椭圆测定测量中,发现增加PAB时间和温度导致厚度降低和折射率增加,这表明抗蚀剂膜的密度变高。然后,我们使用原子力显微镜用尖端缩进方法分析了抗蚀剂膜的机械强度。发现抗蚀剂膜的硬度受Pab条件的影响,并且无论PAB条件如何,膜表面下面都存在硬化层。最后,我们使用与原子力显微镜尖端(DPAT)方法的直接剥离进行折叠180nm抗蚀点图案来进行载荷的测量。除了在一些关键条件下,载荷范围为600至2000nn,总体上并且基本上增加,因为当PAB温度或时间增加了缩进测量时,除了一些关键条件。通过使用AFM的这些评估,我们成功地评估了用各种PAB条件加工的抗蚀剂膜的机械性能。结果发现,PAB条件明显影响抗蚀剂膜的硬度,并且它与模式塌陷载荷密切相关。

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