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The Importance of a Surface Sis-O-Si Bond between Alkylchlorosilanes and Silica in Defining the Distribution of Water on the Surface

机译:烷基氯硅烷和二氧化硅之间的表面SIS-O-Si键在定义表面上的水分布之间的重要性

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The surface treatment of siliceous materials with organochlorosilanes has widespread usage in diverse areas as self-assembled monolayers1, chromatography2'3 and xerography.4'5 While the properties imparted by the organosilane are most often dictated by the organo groups, it is generally recognized that the formation of a surface Sis-O-Si bond would be important for obtaining highly robust films. However, a surface Si,-O-Si bond with every adsorbed organosilane may not be needed. A robust film could be attained with few surface bonds between the siloxy network and the surface hydroxyl groups. In this paper, we show that the presence of a covalent bond with the surface SiOH group is a necessary condition to alter the triboelectric properties of the silica. We believe that the surface bonds alter the distribution of water on the surface and the results are explained in terms of a leaky dielectric model in which the charge is dissipated by the formation of a contiguous water layer on the silica. The contiguous water layer is disrupted by the presence of the surface Sia-O-Si bonds.
机译:具有有机氯硅烷的硅质材料的表面处理在多种区域中具有广泛的使用作为自组装的单层1,色谱法2'3和Xerography.4'5,而有机硅烷赋予的性质最常被有机基团决定,则通常认识到表面SIS-O-Si键的形成对于获得高稳健的薄膜是重要的。然而,可能不需要与每种吸附有机硅烷的表面Si,-O-Si键。可以在硅氧基网络和表面羟基之间具有少量表面键来实现鲁棒膜。在本文中,我们表明,与表面SiOH基团的共价键的存在是改变二氧化硅的摩擦性质的必要条件。我们认为,表面键改变表面上的水分布,结果是根据泄漏介电模型解释的,其中通过在二氧化硅上形成连续水层来消散电荷。连续的水层通过表面SIA-O-Si键的存在破坏。

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