Simulation and modeling of electron-beam lithography for delineating 0.2-um line and space patterns

摘要

This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2$mu@m line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the developement mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resisit characteristics in the solvents to delineate 0.2$mu@m/0.3$mu@m line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2$mu@m line and space patterns with various forms as the variance of exposure energy and develop time. Also, we can see the proximity effects in generating pattern. These results agree with actual process for deep sub-micron patterns.