Remote plasma hydrogenation of Mg-doped GaN

摘要

The effects of deliberate hydrogenation of Mg-doped, p-type GaN thin films were studied. The films grown by metalorganic chemical vapor deposition were exposed to atomic deuterium in a remote plasma hydrogenation system. Secondary ion mass spectrometry revealed incorporation of deuterium throughout the entire film after deuteration at 600°C. Variable temperature Hall effect measurements show that the incorporation of deuterium leads to a reduction of the concentration of Mg acceptors associated with an increase of the hole Hall mobility. This is the most direct observation to date that Mg-H complexes are responsible for the low p-type doping efficiency in as-grown. Mg-doped GaN.