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Copper ion migration in insulated metal substrates

机译:绝缘金属基材中的铜离子迁移

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Insulated metal substrates (IMS) constructed with three layers a metal base plate, a thin insulation layer and a copper conduction foil have been applied to power circuits of 100-400 V. In such IMS, the insulation layer is stressed under a high strength electric field of 1-3 kV/mm. This paper describes the results of enhanced thermal humidity bias tests (THB) (85/spl deg/C,70%RH,DC800V,1250 V) for the insulation layer. It was clarified that copper ion migration occurred in the insulation layer and that its occurrence was related to the amount of ionic impurity in insulation material. The new IMS which the authors have developed has increased resistance to such copper ion migration.
机译:用三层构造的绝缘金属基板(IMS)构造有三层金属底板,薄绝缘层和铜导通箔的电力电路已经施加到100-400V的电源电路中。在这种IMS中,绝缘层在高强度电动下应力字段为1-3 kV / mm。本文介绍了绝缘层增强热湿度偏置试验(THB)(85 / SPL DEG / C,70%RH,DC800V,1250V)的结果。澄清了绝缘层中发生铜离子迁移,并且其发生与绝缘材料中的离子杂质量有关。作者开发的新IMS对这种铜离子迁移的抵抗力增加了。

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