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ABSORPTIONS AT UV EDGE AND OPTICAL GAPS OF BISMUTH INSULATOR/SEMICONDUCTOR GLASSES

机译:在铋绝缘子/半导体眼镜的UV边缘和光学间隙处吸收

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Relations between UV/Vis absorption edge position, shape and composition have been discussed for many bismuth oxide glasses, BaO-Bi O_r R_hO_r (R_hO_r: B_2O_3, SiO_2, P_2O_5 etc.). Peaks and/or shoulders at edges of absorption spectra of many of those glasses have been reported for the first time and attributed to structure change caused by addition of some conventional glass formers (R_hO_r. indicated above). Optical gaps are all found to have energies which decrease with the contents of heavy metal oxide in the glasses. The optical spectra of these glasses show typical features of electronic energy level structures similar to that of semiconductors.
机译:已经讨论了UV / Vis吸收边缘位置,形状和组合物的关系,用于许多氧化铋玻璃,BaO-Bi O_R R_HO_R(R_HO_R:B_2O_3,SiO_2,P_2O_5等)。首次报道了许多这些眼镜的吸收光谱边缘的峰和/或肩部,并归因于通过添加一些常规玻璃造形剂引起的结构变化(R_HO_R。上面指出)。光学间隙全部被发现具有与眼镜中的重金属氧化物的含量降低的能量。这些玻璃的光学光谱显示出类似于半导体的电子能级结构的典型特征。

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