Growth of defect-free butt-coupled InGaAsP/InGaAsP strain compensated multiple quantum well by metal-organic vapor phase epitaxy

摘要

The electro-absorption modulator integrated distributed feedback (DFB) laser is an attractive device for a high bit rate and long haul optical communication system due to its narrow modulated spectral linewidth compared to a direct drive laser diode. In this report we present the successful growth of InGaAsP/InGaAsP strain compensated MQW butt-coupled to MQW laser by using a thick InP buffer layer growth.