High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths

摘要

Greater than 80% external quantum efficiency has been demonstrated in a dual-wavelength resonant-cavity photodetector. The absorption takes place in an In/sub 0.53/Ga/sub 0.47/As absorbing layer which is placed in an InP Fabry-Perot cavity. The top mirror is formed by evaporating one pair of a CaF/sub 2//ZnSe dielectric stack and a GaAs/AlAs dual-wavelength mirror is wafer-bonded to the InP-based cavity to serve as the bottom mirror.