A DOE-ILP Assisted Conjugate-Gradient Based Power and Stability Optimization in High-K Nano-CMOS SRAM

摘要

In this paper, a novel design flow is presented for power minimization of nano-CMOS SRAM (static random access memory) circuits, while maintaining their performance. A 32nm high-K/metal-gate SRAM is used as an example circuit. The baseline SRAM circuit is subjected to power minimization using a dual-Vrh assignment based on a novel Design of Experiments-Integer Linear Programming (DOE-ILP) approach. However, this leads to a 15% reduction in the Static Noise Margin (SNM) of the SRAM, which is an indicator of the stability degradation of the SRAM. This reduction in the SNM is then overcome using a conjugate gradient optimization, while maintaining the minimum power consumption. The final SRAM design shows 86% reduction in power (including leakage) consumption and 8% increase in the SNM compared to the baseline design. The variability analysis of the optimized cell is carried out considering the variability effect in 12 parameters to study the robustness of the optimal SRAM circuit. An 8 x 8 array is constructed to show the feasibility of the proposed SRAM.